Gas Distribution System for Improved Transient Phase Deposition

ABSTRACT

Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

CROSS-REFERENCES TO RELATED APPLICATIONS

The present application is a Divisional of U.S. patent application Ser.No. 11/123,453 filed May 4, 2005 (Attorney Docket No.: 016301-052610US),which claims the benefit of U.S. Provisional Patent Application No.60/631,714 filed Nov. 29, 2004.

BACKGROUND OF THE INVENTION

This invention relates generally to semiconductor processing and, moreparticularly, to an improved gas distribution system, for instance, fora chemical vapor deposition chamber to provide improved transient phasedeposition.

One of the primary steps in the fabrication of modern semiconductordevices is the formation of a thin layer on a semiconductor substrate bychemical reaction of gases. Such a deposition process is referred togenerally as chemical-vapor deposition (“CVD”). Conventional thermal CVDprocesses supply reactive gases to the substrate surface whereheat-induced chemical reactions take place to produce a desired layer.Plasma-enhanced CVD (“PECVD”) techniques, on the other hand, promoteexcitation and/or dissociation of the reactant gases by the applicationof radio-frequency (“RF”) energy to a reaction zone near the substratesurface, thereby creating a plasma. The high reactivity of the speciesin the plasma reduces the energy required for a chemical reaction totake place, and thus lowers the temperature required for such CVDprocesses as compared to conventional thermal CVD processes. Theseadvantages are further exploited by high-density-plasma (“HDP”) CVDtechniques, in which a dense plasma is formed at low vacuum pressures sothat the plasma species are even more reactive. “High-density” isunderstood in this context to mean having an ion density that is equalto or exceeds 10¹¹ ions/cm³.

Particular applications that lend themselves to effective use of HDP-CVDtechniques include shallow-trench isolation (“STI”), premetal dielectric(“PMD”) applications, and intermetal dielectric (“IMD”) applications.One issue that affects deposition properties in various suchapplications is diffusion between adjoining layers that have differentcompositions, which can adversely affect certain desired properties ofthe resulting layer structure. One approach that has been used toprevent such diffusion includes deposition of an additional intermediatebarrier layer. For example, when doped silicon oxide is deposited in IMDapplications, diffusion of the dopant to metal lines may cause theformation of undesirable chemical species at the oxide/metal interface,resulting in poor adhesion between the oxide and the metal. Depositionof a silicon-rich liner on the metal prior to depositing the dopedsilicon oxide layer acts to prevent dopant diffusion. Including thebarrier layer has the beneficial effect of improving adhesion in thestructure. It is almost routine now in many applications to depositbarrier layers when forming certain structures. For example, asilicon-rich oxide liner is commonly formed on a substrate prior todeposition of a layer of fluorine-doped silicon oxide influorosilicate-glass (“FSG”) applications using HDP-CVD.

The deposition of an initial deposition layer or liner is a keycomponent in preventing plasma damage in HDP-CVD reactors. There issubstantial difficulty in achieving a uniform liner due to thenonuniform gas distribution in the transient phase of initialdeposition. One current approach to deposit a uniform liner employs alow pressure strike which involves gas mixing in the chamber withoutplasma. During the mixing step, the substrate is cooling without theplasma, thereby lowering the deposition temperature of the liner. Theliner precursor gases typically may include oxygen and a silicon-sourcegas such as silane, and perhaps also a fluorine-containing gas such asSiF₄. Striking of the plasma after the premixing step may proceed by alow-pressure strike such as described in the copending, commonlyassigned U.S. patent application Ser. No. 09/470,819, filed Dec. 23,1999, entitled “LOW PRESSURE STRIKE IN HDP-CVD CHAMBER.” Use of lowpressure strike also avoids plasma instability during the plasma stageignition period, which might otherwise contribute to inconsistent filmquality.

On the other hand, maximizing the deposition temperature has beendemonstrated to be a key gapfill component in a HDP-CVD reactor. Bylowering the deposition temperature using low pressure strike, thegapfill characteristics will tend to suffer.

BRIEF SUMMARY OF THE INVENTION

Embodiments of the present invention are directed to a gas distributionsystem which distributes the gas more uniformly into a process chamberduring a transient phase when the gas initially flows via the gasdistribution system into a process chamber. In specific embodiments, thegas distribution system incorporates variable orifice sizes between anouter channel and an inner channel. The gas flows via a gas inlet intothe outer channel, and then travels through the orifices havingdifferent sizes into the inner channel. The size of an orifice increaseswith a distance between the orifice and the gas inlet as measured alongthe outer channel. In this way, the gas flow is distributed more evenlyinto the inner gas channel which is fluidicly coupled to a plurality ofgas outlets disposed around the chamber to introduce the gas into thechamber. The outer and inner channels are configured in a circular gasring around the process chamber. The gas distribution system may be usedto deposit a uniform liner without lowering initial depositiontemperature as is done in a low pressure strike approach, therebyensuring quality of the deposition, including good gapfillcharacteristics.

In accordance with an aspect of the present invention, a gasdistribution system comprises a gas ring including an outer surface andan inner surface, and a gas inlet disposed at the outer surface of thegas ring. The gas inlet is fluidicly coupled with a first channel whichis disposed between the outer surface and the inner surface of the gasring. A plurality of gas outlets are distributed over the inner surfaceof the gas ring, and are fluidicly coupled with a second channel whichis disposed between the outer surface and the inner surface of the gasring. A plurality of orifices are fluidicly coupled between the firstchannel and the second channel. The plurality of orifices are spacedfrom the gas inlet by a plurality of distances, and have sizes whichvary with the distances from the gas inlet as measured along the firstchannel, such that the size of the orifice increases with an increase inthe distance between the orifice and the gas inlet as measured along thefirst channel.

In accordance with another aspect of the invention, a method ofdistributing a gas flowing into a chamber for processing a substratecomprises providing a gas ring including an outer surface and an innersurface, a first channel disposed between the outer surface and theinner surface, and a second channel disposed between the outer surfaceand the inner surface. The first channel is fluidicly coupled with thesecond channel via a plurality of orifices. A gas is introduced into thegas ring via a gas inlet disposed at the outer surface of the gas ring.The gas flows via the gas inlet into the first channel through theplurality of orifices into the second channel and through a plurality ofgas outlets which are fluidicly coupled with the second channel, andinto the chamber. The plurality of orifices are spaced from the gasinlet by a plurality of distances. The orifices have different sizes toprovide a substantially uniform distribution of the gas into the chambervia the gas outlets during a transient period when the gas is initiallyintroduced into the gas ring.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified diagram of an embodiment of a high density plasmachemical vapor deposition (HDP-CVD) system according to the presentinvention;

FIG. 2 is a simplified cross section of a gas ring that may be used inconjunction with the exemplary HDP-CVD system of FIG. 1;

FIG. 3 is a cross-sectional view of a gas ring according to anembodiment of the present invention;

FIG. 4 is a close-up cross-sectional view of a portion of the gas ringof FIG. 3;

FIG. 5 is a view illustrating the thickness variation of a layerdeposited on a substrate using a prior gas ring; and

FIG. 6 is a view illustrating the thickness variation of a layerdeposited on a substrate under the same conditions as for the layer inFIG. 5 and using a gas ring according to an embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 1 illustrates one embodiment of a high density plasma chemicalvapor deposition (HDP-CVD) system 10 in which a dielectric layer can bedeposited. System 10 includes a chamber 13, a vacuum system 70, a sourceplasma system 80A, a bias plasma system 80B, a gas delivery system 33,and a remote plasma cleaning system 50.

The upper portion of chamber 13 includes a dome 14, which is made of aceramic dielectric material, such as aluminum oxide or aluminum nitride.Dome 14 defines an upper boundary of a plasma processing region 16.Plasma processing region 16 is bounded on the bottom by the uppersurface of a substrate 17 and a substrate support 18.

A heater plate 23 and a cold plate 24 surmount, and are thermallycoupled to, dome 14. Heater plate 23 and cold plate 24 allow control ofthe dome temperature to within about ±10° C. over a range of about 100°C. to 200° C. This allows optimizing the dome temperature for thevarious processes. For example, it may be desirable to maintain the domeat a higher temperature for cleaning or etching processes than fordeposition processes. Accurate control of the dome temperature alsoreduces the flake or particle counts in the chamber and improvesadhesion between the deposited layer and the substrate.

Generally, exposure to the plasma heats a substrate positioned onsubstrate support 18. Substrate support 18 includes inner and outerpassages (not shown) that can deliver a heat transfer gas (sometimesreferred to as a backside cooling gas) to the backside of the substrate.

The lower portion of chamber 13 includes a body member 22, which joinsthe chamber to the vacuum system. A base portion 21 of substrate support18 is mounted on, and forms a continuous inner surface with, body member22. Substrates are transferred into and out of chamber 13 by a robotblade (not shown) through an insertion/removal opening (not shown) inthe side of chamber 13. Lift pins (not shown) are raised and thenlowered under the control of a motor (also not shown) to move thesubstrate from the robot blade at an upper loading position 57 to alower processing position 56 in which the substrate is placed on asubstrate receiving portion 19 of substrate support 18. Substratereceiving portion 19 includes an electrostatic chuck 20 that secures thesubstrate to substrate support 18 during substrate processing. In apreferred embodiment, substrate support 18 is made from an aluminumoxide or aluminum ceramic material.

Vacuum system 70 includes throttle body 25, which houses three-bladethrottle valve 26 and is attached to gate valve 27 and turbo-molecularpump 28. It should be noted that throttle body 25 offers minimumobstruction to gas flow, and allows symmetric pumping. Gate valve 27 canisolate pump 28 from throttle body 25, and can also control chamberpressure by restricting the exhaust flow capacity when throttle valve 26is fully open. The arrangement of the throttle valve, gate valve, andturbo-molecular pump allow accurate and stable control of chamberpressures from between about 1 milli-Torr to about 2 Torr.

The source plasma system 80A includes a top coil 29 and side coil 30,mounted on dome 14. A symmetrical ground shield (not shown) reduceselectrical coupling between the coils. Top coil 29 is powered by topsource RF (SRF) generator 31A, whereas side coil 30 is powered by sideSRF generator 31B, allowing independent power levels and frequencies ofoperation for each coil. This dual coil system allows control of theradial ion density in chamber 13, thereby improving plasma uniformity.Side coil 30 and top coil 29 are typically inductively driven, whichdoes not require a complimentary electrode. In a specific embodiment,the top source RF generator 31A provides up to about 8,000 watts (7 kW)of RF power or higher at nominally 2 MHz and the side source RFgenerator 31B provides up to 8,000 watts (5 kW) of RF power or higher atnominally 2 MHz. The operating frequencies of the top and side RFgenerators may be offset from the nominal operating frequency (e.g. to1.7-1.9 MHz and 1.9-2.1 MHz, respectively) to improve plasma-generationefficiency.

A bias plasma system 80B includes a bias RF (BRF) generator 31C and abias matching network 32C. The bias plasma system 80B capacitivelycouples substrate portion 17 to body member 22, which act ascomplimentary electrodes. The bias plasma system 80B serves to enhancethe transport of plasma species (e.g., ions) created by the sourceplasma system 80A to the surface of the substrate. In a specificembodiment, bias RF generator provides up to 8,000 watts of RF power orhigher at 13.56 MHz.

RF generators 31A and 31B include digitally controlled synthesizers andoperate over a frequency range between about 1.8 to about 2.1 MHz. Eachgenerator includes an RF control circuit (not shown) that measuresreflected power from the chamber and coil back to the generator andadjusts the frequency of operation to obtain the lowest reflected power,as understood by a person of ordinary skill in the art. RF generatorsare typically designed to operate into a load with a characteristicimpedance of 50 ohms. RF power may be reflected from loads that have adifferent characteristic impedance than the generator. This can reducepower transferred to the load. Additionally, power reflected from theload back to the generator may overload and damage the generator.Because the impedance of a plasma may range from less than 5 ohms toover 900 ohms, depending on the plasma ion density, among other factors,and because reflected power may be a function of frequency, adjustingthe generator frequency according to the reflected power increases thepower transferred from the RF generator to the plasma and protects thegenerator. Another way to reduce reflected power and improve efficiencyis with a matching network.

Matching networks 32A and 32B match the output impedance of generators31A and 31B with their respective coils 29 and 30. The RF controlcircuit may tune both matching networks by changing the value ofcapacitors within the matching networks to match the generator to theload as the load changes. The RF control circuit may tune a matchingnetwork when the power reflected from the load back to the generatorexceeds a certain limit. One way to provide a constant match, andeffectively disable the RF control circuit from tuning the matchingnetwork, is to set the reflected power limit above any expected value ofreflected power. This may help stabilize a plasma under some conditionsby holding the matching network constant at its most recent condition.Other measures may also help stabilize a plasma. For example, the RFcontrol circuit can be used to determine the power delivered to the load(plasma) and may increase or decrease the generator output power to keepthe delivered power substantially constant during deposition of a layer.

A gas delivery system 33 provides gases from several sources, 34A-34Fchamber for processing the substrate via gas delivery lines 38 (onlysome of which are shown). As would be understood by a person of skill inthe art, the actual sources used for sources 34A-34F and the actualconnection of delivery lines 38 to chamber 13 varies depending on thedeposition and cleaning processes executed within chamber 13. Gases areintroduced into chamber 13 through a gas ring 37 and/or a top nozzle 45.FIG. 2 is a simplified, partial cross-sectional view of chamber 13showing additional details of gas ring 37.

In one embodiment, first and second gas sources, 34A and 34B, and firstand second gas flow controllers, 35A′ and 35B′, provide gas to ringplenum 36 in gas ring 37 via gas delivery lines 38 (only some of whichare shown). Gas ring 37 has a plurality of gas nozzles 39 (only one ofwhich is shown for purposes of illustration) that provides a uniformflow of gas over the substrate. Nozzle length and nozzle angle may bechanged to allow tailoring of the uniformity profile and gas utilizationefficiency for a particular process within an individual chamber. In oneembodiment, gas ring 37 has 24 gas nozzles 39 made from an aluminumoxide ceramic.

Gas ring 37 also has a plurality of gas nozzles 40 (only one of which isshown), which in a preferred embodiment are co-planar with and the samein length as source gas nozzles 39, and in one embodiment receive gasfrom body plenum 41. Gas nozzles 39 and 40 are not fluidly coupled insome embodiments where it is desirable not to mix gases before injectingthe gases into chamber 13. In other embodiments, gases may be mixedprior to injecting the gases into chamber 13 by providing apertures (notshown) between body plenum 41 and gas ring plenum 36. In one embodiment,third and fourth gas sources, 34C and 34D, and third and fourth gas flowcontrollers, 35C and 35D′, provide gas to body plenum via gas deliverylines 38. Additional valves, such as 43B (other valves not shown), mayshut off gas from the flow controllers to the chamber.

In embodiments where flammable, toxic, or corrosive gases are used, itmay be desirable to eliminate gas remaining in the gas delivery linesafter a deposition. This may be accomplished using a 3-way valve, suchas valve 43B, to isolate chamber 13 from delivery line 38A and to ventdelivery line 38A to vacuum foreline 44, for example. As shown in FIG.1, other similar valves, such as 43A and 43C, may be incorporated onother gas delivery lines. Such 3-way valves may be placed as close tochamber 13 as practical, to minimize the volume of the unvented gasdelivery line (between the 3-way valve and the chamber). Additionally,two-way (on-off) valves (not shown) may be placed between a mass flowcontroller (“MFC”) and the chamber or between a gas source and an MFC.

Referring again to FIG. 1, chamber 13 also has top nozzle 45 and topvent 46. Top nozzle 45 and top vent 46 allow independent control of topand side flows of the gases, which improves film uniformity and allowsfine adjustment of the film's deposition and doping parameters. Top vent46 is an annular opening around top nozzle 45. In one embodiment, firstgas source 34A supplies source gas nozzles 39 and top nozzle 45. Sourcenozzle MFC 35A′ controls the amount of gas delivered to source gasnozzles 39 and top nozzle MFC 35A controls the amount of gas deliveredto top gas nozzle 45. Similarly, two MFCs 35B and 35B′ may be used tocontrol the flow of oxygen to both top vent 46 and oxidizer gas nozzles40 from a single source of oxygen, such as source 34B. The gasessupplied to top nozzle 45 and top vent 46 may be kept separate prior toflowing the gases into chamber 13, or the gases may be mixed in topplenum 48 before they flow into chamber 13. Separate sources of the samegas may be used to supply various portions of the chamber.

In the embodiment shown in FIGS. 1 and 2, remote microwave-generatedplasma cleaning system 50 is provided to periodically clean depositionresidues from chamber components. The cleaning system includes a remotemicrowave generator 51 that creates a plasma from a cleaning gas source34E (e.g., molecular fluorine, nitrogen trifluoride, other fluorocarbonsor equivalents) in reactor cavity 53. The reactive species resultingfrom this plasma are conveyed to chamber 13 through cleaning gas feedport 54 via applicator tube 55. The materials used to contain thecleaning plasma (e.g., cavity 53 and applicator tube 55) must beresistant to attack by the plasma. The distance between reactor cavity53 and feed port 54 should be kept as short as practical, since theconcentration of desirable plasma species may decline with distance fromreactor cavity 53. Generating the cleaning plasma in a remote cavityallows the use of an efficient microwave generator and does not subjectchamber components to the temperature, radiation, or bombardment of theglow discharge that may be present in a plasma formed in situ.Consequently, relatively sensitive components, such as electrostaticchuck 20, do not need to be covered with a dummy wafer or otherwiseprotected, as may be required with an in situ plasma cleaning process.

FIG. 3 shows a gas ring 300 according to one embodiment of the presentinvention. The gas ring 300 includes an outer surface or periphery 302and an inner surface or periphery 304. A gas inlet 306 is disposed atthe outer surface 302 of the gas ring 300, and is fluidicly coupled witha first channel or plenum 308. The first channel 308 is disposed betweenthe outer surface 302 and the inner surface 304 of the gas ring 300. Asecond channel or plenum 310 is disposed between the outer surface 302and the inner surface 304 of the gas ring 300, and is fluidicly coupledwith the first channel 308 via a plurality of orifices or openings 312.As shown in FIG. 3, the first channel is an outer channel 308, and thesecond channel is an inner channel 310 which is disposed between theouter channel 308 and the inner surface 304 of the gas ring 300. Inother embodiments, however, the first and second channels 308, 310 maybe arranged differently. For instance, the two channels may be laterallyspaced from one another along the axis of the gas ring 300 and haveapproximately the same circumference.

FIG. 3 shows six orifices 312 which are substantially uniformly spacedalong a circumference of the first channel 308 or the second channel310. A plurality of first gas outlets 316 are distributed over the innersurface 304 of the gas ring 300, and are fluidicly coupled with thesecond channel 310. FIG. 3 shows 24 first gas outlets 316. There are 12second gas outlets 318 which are fluidicly isolated from the secondchannel 310 and configured to introduce gas into the process chamberfrom another gas source. For instance, the first gas outlets 316 may beused to introduce a silicon-source gas such as silane, and the secondgas outlets 318 may be used to introduce another reaction gas such asoxygen.

In the specific embodiment shown, the second channel 310 extends 360°around the inner surface 304 of the gas ring 300, while the firstchannel 308 extends less than 360° partially around the inner surface304 of the gas ring 300 with two first channel ends 320 spaced from oneanother. An orifice 312 is disposed near each of the two first channelends 320, which are angularly spaced from one another by about 60° inthe gas ring 300 that includes six uniformly spaced orifices 312, asshown in FIG. 3. The gas inlet 306 is coupled with the first channel 308at a location which is approximately midway between the two firstchannel ends 320 in distance as measured along the first channel 308. Ingeneral, the plurality of orifices 312 comprise an even number oforifices 312 which is greater than two. The plurality of orifices 312are substantially symmetrically disposed with respect to a line 324passing through the gas inlet 306 and a center of a circumference of thefirst channel 308. None of the orifices 312 lie on the line passingthrough the gas inlet 306 and the center of the circumference of thefirst channel 308. Of course, in alternate embodiments, the number andspacing of the orifices 312 may vary.

The plurality of orifices 312 are spaced from the gas inlet 306 by aplurality of distances. The orifices 312 have different sizes to providea substantially uniform gas distribution via the gas outlets 316 duringa transient period when a gas is initially introduced into the gas ring300. In general, the orifices 312 have sizes which vary with thedistances from the gas inlet 306 as measured along the first channel308, such that the size of the orifice 312 increases with an increase inthe distance between the orifice 312 and the gas inlet 306 as measuredalong the first channel 308.

FIG. 4 shows a close-up view of the region near one of the first channelends 320. One way to make an orifice 312 is by drilling a hole throughthe portion of the gas ring 300 from the outer surface 302 through thefirst channel 308 into the second channel 310. The hole between theouter surface 302 and the first channel 308 may then be closed by a plug330.

FIGS. 5 and 6 show experimental results of depositing liners or lininglayers on substrates using a prior gas ring 500 and the gas ring 300according to the exemplary embodiment of the present invention. In FIG.5, the prior gas ring 500 includes a gas inlet 502 fluidicly coupled tothe outer channel 504, which is fluidicly coupled to the inner channel506 by two orifices 508 disposed 180° apart. There are 24 first gasoutlets 510 fluidicly coupled to the inner channel 506, and 12 secondgas outlets 512 fluidicly coupled to another gas source. The orifices508 are about 0.188 inch in diameter. The gas ring 300 has six orifices312, including two orifices 312 a about 30° from the gas inlet 306, twoorifices 312 b about 90° from the gas inlet 306, and two orifices 312 cabout 150° from the gas inlet 306. The closest orifices 312 a are about0.093 inch in diameter, the intermediate orifices 312 b are about 0.125inch in diameter, and the farthest orifices 312 c are about 0.221 inchin diameter.

The liners being deposited are silicon oxide liners formed byplasma-enhanced chemical vapor deposition using the HDP-CVD system 10.The process gas includes silane introduced through the first gas outlets316 or 510 and O₂ introduce through the second gas outlets 318 or 512.The energy applied includes about 1500 W in the top coil 29 and about5000 W in the side coil 30. The operating temperature is about 450° C.and the operating pressure is about 6 milli-torr. The substrates 520 and620 are 300 mm in diameter. The deposition time is about 3 seconds.

The liner formed on the substrate 520 using the prior gas ring 500 has athickness of about 241.8 Å with a variation of 8.10%. As shown in FIG.5, the liner is thicker on the two sides which are closest to the twoorifices 508. The liner formed on the substrate 620 using the gas ring300 of the present invention has a thickness of about 216.5 Å with avariation of 3.62%, which is a significant 4.48% improvement. Thethickness variation is reduced by more than half. As shown in FIG. 6,the liner thickness is more symmetrical with respect to the center ofthe substrate 620. The symmetry value of the liner is 2.66 (Å/Å) in FIG.6 and is 4.2 in FIG. 5. A plurality of tests were conducted fordifferent orifices sizes, and it was established that uniformity of theliner is improved by increasing the size of the orifice 312 with anincrease in the distance between the orifice 312 and the gas inlet 306as measured along the first channel 308. Test results further show thatafter the transient period, subsequent deposition under more steadystate conditions continues to produce generally uniform layers using thegas ring 300 with the variable orifices 312.

It is to be understood that the above description is intended to beillustrative and not restrictive. Many embodiments will be apparent tothose of skill in the art upon reviewing the above description. By wayof example, the present invention may extend to other types of chambersand to other processes for processing substrates. The number, size, andarrangement of the variable orifices 312 may be modified and adapted tospecific situations. The scope of the invention should, therefore, bedetermined not with reference to the above description, but insteadshould be determined with reference to the appended claims along withtheir full scope of equivalents.

1. A method of distributing a gas flowing into a chamber for processinga substrate, the method comprising: providing a gas ring including anouter surface and an inner surface, a first channel disposed between theouter surface and the inner surface, and a second channel disposedbetween the outer surface and the inner surface, the first channel beingfluidicly coupled with the second channel via a plurality of orifices;and introducing a gas into the gas ring via a gas inlet disposed at theouter surface of the gas ring, the gas flowing via the gas inlet intothe first channel through the plurality of orifices into the secondchannel and through a plurality of gas outlets which are fluidiclycoupled with the second channel, and into the chamber; wherein theplurality of orifices are spaced from the gas inlet by a plurality ofdistances, wherein the orifices have different sizes to provide asubstantially uniform distribution of the gas into the chamber via thegas outlets during a transient period when the gas is initiallyintroduced into the gas ring.
 2. The method of claim 13 wherein thesizes of the openings vary with the distances from the gas inlet asmeasured along the first channel, such that the size of the openingincreases with an increase in the distance between the opening and thegas inlet as measured along the first channel.
 3. The method of claim 13wherein the plurality of orifices are substantially symmetricallydisposed with respect to a line passing through the gas inlet and acenter of a circumference of the first channel.
 4. The method of claim13 wherein the plurality of orifices comprise an even number of orificeswhich is greater than two, and wherein none of the orifices lie on theline passing through the gas inlet and the center of the circumferenceof the first channel.
 5. The method of claim 13 wherein the plurality oforifices are substantially uniformly spaced along the circumference ofthe first channel.
 6. The method of claim 13 wherein the gas comprises asilicon-source gas.
 7. The method of claim 13 wherein the gas is reactedinside the chamber to form a lining layer on the substrate.
 8. Themethod of claim 13 wherein the gas is reacted inside the chamber byapplying a plasma in the chamber.